Characterization and Modeling of DHBT in InP/GaAsSb Technology for the Design and Fabrication of a Ka Band MMIC Oscillator

This paper presents the design of an MMIC oscillator operating at a 38 GHz frequency. This circuit was fabricated by the III–V Lab with the new InP/GaAsSb Double Heterojunction Bipolar Transistor (DHBT) submicronic technology (We=700 nm). The transistor used in the circuit has a 15 μm long two-finger emitter. This paper describes the complete nonlinear modeling of this DHBT, including the cyclostationary modeling of its low frequency (LF) noise sources. The specific interest of the methodology used to design this oscillator resides in being able to choose a nonlinear operating condition of the transistor from an analysis in amplifier mode. The oscillator simulation and measurement results are compared. A 38 GHz oscillation frequency with 8.6 dBm output power and a phase noise of −80 dBc/Hz at 100 KHz offset from carrier have been measured

Design of state of art low noise VCO using MMIC negative resistance modules

In this paper we present the design, fabrication and measurement of a state of the art low noise 10 GHz MESFET VCO. The novel design method associated with modern CAD. tools yield oscillators with an excellent phase noise of -90 dBc/Hz at an offset of 100KHz, which is the best result published for a X band FET VCO, with an electrical tuning range of 10%. The output power of 15 dBm over the oscillation frequency range is obtained

Новеллы законодательства об авторском праве и смежных правах

After investigation of the possible HBT low frequency noise sources and their localization in order to extract a HBT low frequency noise model, the realisation and performances of a S band Voltage Controlled Oscillator (VCO) is reported. This VCO is fully integrated in MMIC technology, and is based on a push-push topology. The circuit is covering 280 MHz tuning range around a centre frequency of 2 GHz with a phase noise of –95 dBc/Hz at 10 KHz offset

Linearity and Efficiency Characterization of AlGaN/GaN and InAlGaN/GaN HEMTs devices using Multi-tone Large Signal Measurements

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